2006
Mehta, Alok; Rumpf, RC; Roth, Z; Johnson, EG
Nanofabrication of a space-variant optical transmission filter Journal Article
In: Optics letters, vol. 31, no. 19, pp. 2903-2905, 2006, ISSN: 1539-4794.
Abstract | Links | BibTeX | Tags: spatial filters, spatially-variant optical transmission filter
@article{RN30,
title = {Nanofabrication of a space-variant optical transmission filter},
author = {Alok Mehta and RC Rumpf and Z Roth and EG Johnson},
url = {https://www.osapublishing.org/ol/abstract.cfm?uri=ol-31-19-2903},
doi = {https://doi.org/10.1364/OL.31.002903},
issn = {1539-4794},
year = {2006},
date = {2006-01-01},
journal = {Optics letters},
volume = {31},
number = {19},
pages = {2903-2905},
abstract = {A space-variant optical transmission filter is demonstrated for which a simplified process is used to tailor the spatial response of the filter across the surface of a single wafer. A multilayer stack, of alternating high or low refractive index dielectric materials, was used to produce a narrow transmission notch in the center of a wide stop band. Subsequent patterning and etching of arrays of holes through the volume of the dielectric stack was performed to control the fill factor of the dielectric in the layers. The position of the transmission notch within the reflection spectrum was varied across the device surface by adjusting the hole diameter of the hole arrays. Experimental and numerical simulation were used to confirm the space-variant transmission characteristics of a single-wafer sample with two zones of different hole diameter arrays in the 1550 nm 1550nm  wavelength regime.},
keywords = {spatial filters, spatially-variant optical transmission filter},
pubstate = {published},
tppubtype = {article}
}
A space-variant optical transmission filter is demonstrated for which a simplified process is used to tailor the spatial response of the filter across the surface of a single wafer. A multilayer stack, of alternating high or low refractive index dielectric materials, was used to produce a narrow transmission notch in the center of a wide stop band. Subsequent patterning and etching of arrays of holes through the volume of the dielectric stack was performed to control the fill factor of the dielectric in the layers. The position of the transmission notch within the reflection spectrum was varied across the device surface by adjusting the hole diameter of the hole arrays. Experimental and numerical simulation were used to confirm the space-variant transmission characteristics of a single-wafer sample with two zones of different hole diameter arrays in the <nobr aria-hidden="true" style="box-sizing: border-box; transition: none 0s ease 0s; border: 0px; padding: 0px; margin: 0px; max-width: none; max-height: none; min-width: 0px; min-height: 0px; vertical-align: 0px; line-height: normal;"> 1550 nm 1550nm  wavelength regime.