2009
Poutous, Menelaos K; Roth, Zach; Buhl, Kaia; Pung, Aaron; Rumpf, Raymond C; Johnson, Eric G
Correlation of fabrication tolerances with the performance of guided-mode-resonance micro-optical components Presentation
24.02.2009.
Abstract | Links | BibTeX | Tags: GMR, guided mode resonance (GMR), lithography, numerical simulation, reflectivity
@misc{RN34,
title = {Correlation of fabrication tolerances with the performance of guided-mode-resonance micro-optical components},
author = {Menelaos K Poutous and Zach Roth and Kaia Buhl and Aaron Pung and Raymond C Rumpf and Eric G Johnson},
url = {https://www.spiedigitallibrary.org/conference-proceedings-of-spie/7205/1/Correlation-of-fabrication-tolerances-with-the-performance-of-guided-mode/10.1117/12.814514.short},
doi = {https://doi.org/10.1117/12.814514},
year = {2009},
date = {2009-02-24},
booktitle = {Advanced Fabrication Technologies for Micro/Nano Optics and Photonics II},
volume = {7205},
pages = {72050Y},
publisher = {International Society for Optics and Photonics},
abstract = {Large-scale fabrication of micro-optical Guided-Mode-Resonance (GMR) components using VLSI techniques is desirable, due to the planar system integration capabilities it enables, especially with laser resonator technology. However, GMR performance is dependent on within-wafer as well as wafer-to-wafer lithographic process variability, and pattern transfer fidelity of the final component in the substrate. The fabrication of lithographs below the g-line stepper resolution limit is addressed using multiple patterning. We report results from computational simulations, fabrication and optical reflectance measurements of GMR mirrors and filters (designed to perform around the wavelength of 1550nm), with correlations to lithographic parameter variability, such as photoresist exposure range and etch depth. The dependence of the GMR resonance peak wavelength, peak bandwidth are analyzed as a function of photolithographic fabrication tolerances and process window.},
keywords = {GMR, guided mode resonance (GMR), lithography, numerical simulation, reflectivity},
pubstate = {published},
tppubtype = {presentation}
}
Large-scale fabrication of micro-optical Guided-Mode-Resonance (GMR) components using VLSI techniques is desirable, due to the planar system integration capabilities it enables, especially with laser resonator technology. However, GMR performance is dependent on within-wafer as well as wafer-to-wafer lithographic process variability, and pattern transfer fidelity of the final component in the substrate. The fabrication of lithographs below the g-line stepper resolution limit is addressed using multiple patterning. We report results from computational simulations, fabrication and optical reflectance measurements of GMR mirrors and filters (designed to perform around the wavelength of 1550nm), with correlations to lithographic parameter variability, such as photoresist exposure range and etch depth. The dependence of the GMR resonance peak wavelength, peak bandwidth are analyzed as a function of photolithographic fabrication tolerances and process window.